Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD: Fid-Bau Portal

Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD

Oda, Y. / Watanabe, N. / Yokoyama, H. / Kobayashi, T.

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Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD

Oda, Y. / Watanabe, N. / Yokoyama, H. / Kobayashi, T.

Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD

Oda, Y. / Watanabe, N. / Yokoyama, H. / Kobayashi, T.

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Check availability in my library

Order at Subito €

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Document information

Title:

Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD

Contributors:

Oda, Y. (author) / Watanabe, N. (author) / Yokoyama, H. (author) / Kobayashi, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 532-536

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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