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    Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure

    New search for: Takarabe, K.
    New search for: Ashizawa, H.
    New search for: Minomura, S.
    New search for: Kato, H.
    New search for: Taguchi, T.

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    Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure

    New search for: Takarabe, K.
    New search for: Ashizawa, H.
    New search for: Minomura, S.
    New search for: Kato, H.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure

    New search for: Takarabe, K.
    New search for: Ashizawa, H.
    New search for: Minomura, S.
    New search for: Kato, H.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Multiplicity and Lattice Relaxation of DX Center in AlGaAs:Si Studied by Electron Emission Spectra under Pressure

    Contributors:

    Takarabe, K. (author) / Ashizawa, H. (author) / Minomura, S. (author) / Kato, H. (author) / Taguchi, T.

    Published in:

    Shallow Impurities in Semiconductors ; 447

    MATERIALS SCIENCE FORUM

    Publication date:

    1993-01-01

    Size:

    447 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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