Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels: Fid-Bau Portal

Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

Matulionis, A. / Aninkevicius, V. / Liberis, J. / Matulioniene, I. / Berntgen, J.

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Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

Matulionis, A. / Aninkevicius, V. / Liberis, J. / Matulioniene, I. / Berntgen, J.

Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

Matulionis, A. / Aninkevicius, V. / Liberis, J. / Matulioniene, I. / Berntgen, J.

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Check availability in my library

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Document information

Title:

Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

Contributors:

Matulionis, A. (author) / Aninkevicius, V. (author) / Liberis, J. (author) / Matulioniene, I. (author) / Berntgen, J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 297/298 ; 155-158

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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