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    Improved GaAs/Ga~1~-~xAl~xAs chemical beam epitaxy using triisopropylgallium

    New search for: Lane, P. A.
    New search for: Martin, T.
    New search for: Whitehouse, C. R.
    New search for: Freer, R. W.

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    Improved GaAs/Ga~1~-~xAl~xAs chemical beam epitaxy using triisopropylgallium

    New search for: Lane, P. A.
    New search for: Martin, T.
    New search for: Whitehouse, C. R.
    New search for: Freer, R. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Improved GaAs/Ga~1~-~xAl~xAs chemical beam epitaxy using triisopropylgallium

    New search for: Lane, P. A.
    New search for: Martin, T.
    New search for: Whitehouse, C. R.
    New search for: Freer, R. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Improved GaAs/Ga~1~-~xAl~xAs chemical beam epitaxy using triisopropylgallium

    Contributors:

    Lane, P. A. (author) / Martin, T. (author) / Whitehouse, C. R. (author) / Freer, R. W. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 17 ; 15

    Publication date:

    1993-01-01

    Size:

    15 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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