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    Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

    New search for: Schwedler, R.
    New search for: Gallmann, B.
    New search for: Wolter, K.
    New search for: Kohl, A.

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    Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

    New search for: Schwedler, R.
    New search for: Gallmann, B.
    New search for: Wolter, K.
    New search for: Kohl, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

    New search for: Schwedler, R.
    New search for: Gallmann, B.
    New search for: Wolter, K.
    New search for: Kohl, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

    Contributors:

    Schwedler, R. (author) / Gallmann, B. (author) / Wolter, K. (author) / Kohl, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 20 ; 66

    Publication date:

    1993-01-01

    Size:

    66 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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