Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. et al. | British Library Online Contents | 1995

Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy

Habchi, M. M. / Rebey, A. / Fouzri, A. et al. | British Library Online Contents | 2006

Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells

Camassel, J. / Wolter, K. / Juillaguet, S. et al. | British Library Online Contents | 1993

Optical studies of strained InGaAs/GaAs single quantum wells

Shen, W. Z. / Tang, W. G. / Li, Z. Y. et al. | British Library Online Contents | 1994

Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence

Schwedler, R. / Gallmann, B. / Wolter, K. et al. | British Library Online Contents | 1993