Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane: Fid-Bau Portal

Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane

Voutsas, A. T. / Hatalis, M. K.

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Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane

Voutsas, A. T. / Hatalis, M. K.

Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane

Voutsas, A. T. / Hatalis, M. K.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane

Contributors:

Voutsas, A. T. (author) / Hatalis, M. K. (author) / Komninou, P. / Rocher, A.

Published in:

Intergranular and Interphase Boundaries in Materials ; 431

MATERIALS SCIENCE FORUM

Publication date:

1993-01-01

Size:

431 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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