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    Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation

    New search for: Hobson, W. S.
    New search for: Pearton, S. J.
    New search for: Ren, F.
    New search for: Cheng, Y.

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    Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation

    New search for: Hobson, W. S.
    New search for: Pearton, S. J.
    New search for: Ren, F.
    New search for: Cheng, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation

    New search for: Hobson, W. S.
    New search for: Pearton, S. J.
    New search for: Ren, F.
    New search for: Cheng, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation

    Contributors:

    Hobson, W. S. (author) / Pearton, S. J. (author) / Ren, F. (author) / Cheng, Y. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 20 ; 266

    Publication date:

    1993-01-01

    Size:

    266 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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