Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition: Fid-Bau Portal

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Ross, J. / Rubin, M. / Gustafson, T. K.

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Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Ross, J. / Rubin, M. / Gustafson, T. K.

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Ross, J. / Rubin, M. / Gustafson, T. K.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Contributors:

Ross, J. (author) / Rubin, M. (author) / Gustafson, T. K. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 8 ; 2613

Publication date:

1993-01-01

Size:

2613 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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