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Technological aspects of epitaxial CoSi~2 layers for CMOS

Lauwers, A. / Schreutelkamp, R. J. / Brijs, B. / Bender, H.

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Technological aspects of epitaxial CoSi~2 layers for CMOS

Lauwers, A. / Schreutelkamp, R. J. / Brijs, B. / Bender, H.

Technological aspects of epitaxial CoSi~2 layers for CMOS

Lauwers, A. / Schreutelkamp, R. J. / Brijs, B. / Bender, H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Technological aspects of epitaxial CoSi~2 layers for CMOS

Contributors:

Lauwers, A. (author) / Schreutelkamp, R. J. (author) / Brijs, B. (author) / Bender, H. (author) / Janssen, G. C. A. M. / Jongste, J. F. / Radelaar, S.

Published in:

Proceedings of the Fifth European Workshop on Refractory Metals and Silicides ; 19

APPLIED SURFACE SCIENCE ; 72

Publication date:

1993-01-01

Size:

19 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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