A platform for research: civil engineering, architecture and urbanism
Crystallization of amorphous thin LPCVD Si films: "in situ" TEM measurement of nucleation and grain growth rates
Crystallization of amorphous thin LPCVD Si films: "in situ" TEM measurement of nucleation and grain growth rates
Crystallization of amorphous thin LPCVD Si films: "in situ" TEM measurement of nucleation and grain growth rates
Guillemet, J. P. (author) / De Mauduit, B. (author) / Pieraggi, B. (author) / Bielle-Daspet, D. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 173 ; 379
1993-01-01
379 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1993
|Growth of Titanium Dioxide Thin Films by LPCVD
British Library Online Contents | 2003
|Thermal-induced normal grain growth mechanism in LPCVD polysilicon film
British Library Online Contents | 2005
|British Library Online Contents | 2006
|Chemical Composition of Silicon Nitride Thin Films Prepared by LPCVD
British Library Online Contents | 2006
|