Coexistence of the DX^0 and DX-State in Heavily Doped GaAs:Si?: Fid-Bau Portal

Coexistence of the DX^0 and DX-State in Heavily Doped GaAs:Si?

Goutiers, B. / Dmowski, L. / Willke, U. / Harris, J. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Coexistence of the DX^0 and DX-State in Heavily Doped GaAs:Si?

Goutiers, B. / Dmowski, L. / Willke, U. / Harris, J. J.

Coexistence of the DX^0 and DX-State in Heavily Doped GaAs:Si?

Goutiers, B. / Dmowski, L. / Willke, U. / Harris, J. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Coexistence of the DX^0 and DX-State in Heavily Doped GaAs:Si?

Contributors:

Goutiers, B. (author) / Dmowski, L. (author) / Willke, U. (author) / Harris, J. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1161

Publication date:

1994-01-01

Size:

1161 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

Henning, J. C. M. / Kessener, Y. A. R. R. / Koenraad, P. M. et al. | British Library Online Contents | 1994

Reactions of Gallium Vacancies During Annealing and Zn Diffusion in GaAs:Si

Nguyen Hong Ky / Ganiere, J. D. / Reinhart, F. K. et al. | British Library Online Contents | 1993

ELECTRODE COMPRISING HEAVILY-DOPED CERIA

POIZEAU SOPHIE MARIE CLAIRE / CETIN DENIZ / GOPALAN SRIKANTH | European Patent Office | 2017

Free access

Electrode comprising heavily-doped ceria

POIZEAU SOPHIE MARIE CLAIRE / CETIN DENIZ / GOPALAN SRIKANTH | European Patent Office | 2020

Free access

Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling

Machayekhi, B. / Rahbi, R. / Theys, B. et al. | British Library Online Contents | 1994