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    Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling

    New search for: Machayekhi, B.
    New search for: Rahbi, R.
    New search for: Theys, B.
    New search for: Miloche, M.

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    Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling

    New search for: Machayekhi, B.
    New search for: Rahbi, R.
    New search for: Theys, B.
    New search for: Miloche, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling

    New search for: Machayekhi, B.
    New search for: Rahbi, R.
    New search for: Theys, B.
    New search for: Miloche, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling

    Contributors:

    Machayekhi, B. (author) / Rahbi, R. (author) / Theys, B. (author) / Miloche, M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 951

    Publication date:

    1994-01-01

    Size:

    951 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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