A platform for research: civil engineering, architecture and urbanism
Preparation by molecular beam epitaxy and atomic layer molecular beam epitaxy and characterization of InAs layers 1 monolayer thick in GaAs-based structures
Preparation by molecular beam epitaxy and atomic layer molecular beam epitaxy and characterization of InAs layers 1 monolayer thick in GaAs-based structures
Preparation by molecular beam epitaxy and atomic layer molecular beam epitaxy and characterization of InAs layers 1 monolayer thick in GaAs-based structures
Ferrari, C. (author) / Bocchi, C. (author) / Bosacchi, A. (author) / Franchi, S. (author) / Fornari, R.
1994-01-01
183 pages
Article (Journal)
Unknown
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy
British Library Online Contents | 2000
|Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
British Library Online Contents | 2011
|Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
British Library Online Contents | 1996
|Investigation of ripple defects on molecular beam epitaxy grown GaAs layers
British Library Online Contents | 1993
|Characterization of low temperature GaAs grown by molecular beam epitaxy
British Library Online Contents | 1996
|