Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing: Fid-Bau Portal

Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing

Wang, Q. / Zan, Y. / Wang, J. / Yu, Y.

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Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing

Wang, Q. / Zan, Y. / Wang, J. / Yu, Y.

Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing

Wang, Q. / Zan, Y. / Wang, J. / Yu, Y.

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Document information

Title:

Comparison of properties of solid phase epitaxial silicon on sapphire films recrystallized by rapid thermal annealing and furnace annealing

Contributors:

Wang, Q. (author) / Zan, Y. (author) / Wang, J. (author) / Yu, Y. (author) / Fricke, K. / Krozer, V.

Published in:

High Temperature Electronics: Materials Devices Applications ; 43

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 29

Publication date:

1995-01-01

Size:

43 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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