Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells

Oh, Y.T. / Kang, T.W. / Kim, T.W. | British Library Online Contents | 1999

Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1-xAs/GaAs modulation-doped heterostructures

Im, H. C. / Kim, J. H. / Oh, D. H. et al. | British Library Online Contents | 2006

Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells

Jung, M. / Kim, T. W. / Lee, D. U. et al. | British Library Online Contents | 2002

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells

Kim, J. H. / Woo, J. T. / Lee, I. et al. | British Library Online Contents | 2005

The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer

Lee, M. K. / Song, J. D. / Yu, J. S. et al. | British Library Online Contents | 2001