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    The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer

    New search for: Lee, M. K.
    New search for: Song, J. D.
    New search for: Yu, J. S.
    New search for: Lee, Y. T.
    New search for: Kim, T. W.

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    The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer

    New search for: Lee, M. K.
    New search for: Song, J. D.
    New search for: Yu, J. S.
    New search for: Lee, Y. T.
    New search for: Kim, T. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer

    New search for: Lee, M. K.
    New search for: Song, J. D.
    New search for: Yu, J. S.
    New search for: Lee, Y. T.
    New search for: Kim, T. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer

    Contributors:

    Lee, M. K. (author) / Song, J. D. (author) / Yu, J. S. (author) / Lee, Y. T. (author) / Kim, T. W. (author)

    Published in:

    MATERIALS RESEARCH BULLETIN ; 36 ; 2027-2033

    Publication date:

    2001-01-01

    Size:

    7 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11 / 620

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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