Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells: Fid-Bau Portal

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells

Kim, J. H. / Woo, J. T. / Lee, I. / Kim, T. W. / Yoo, K. H. / Kim, M. D. / Ram-Mohan, L. R.

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Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells

Kim, J. H. / Woo, J. T. / Lee, I. / Kim, T. W. / Yoo, K. H. / Kim, M. D. / Ram-Mohan, L. R.

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells

Kim, J. H. / Woo, J. T. / Lee, I. / Kim, T. W. / Yoo, K. H. / Kim, M. D. / Ram-Mohan, L. R.

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Document information

Title:

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells

Contributors:

Kim, J. H. (author) / Woo, J. T. (author) / Lee, I. (author) / Kim, T. W. (author) / Yoo, K. H. (author) / Kim, M. D. (author) / Ram-Mohan, L. R. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 1716-1722

Publication date:

2005-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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