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    AES study of the GaAs-germanium oxynitride interface

    New search for: Jishiashvili, D.
    New search for: Dzhanelidze, R.
    New search for: Shiolashvili, Z.
    New search for: Nakhutsrishvili, I.
    New search for: Heusler, K. E.

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    AES study of the GaAs-germanium oxynitride interface

    New search for: Jishiashvili, D.
    New search for: Dzhanelidze, R.
    New search for: Shiolashvili, Z.
    New search for: Nakhutsrishvili, I.
    New search for: Heusler, K. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    AES study of the GaAs-germanium oxynitride interface

    New search for: Jishiashvili, D.
    New search for: Dzhanelidze, R.
    New search for: Shiolashvili, Z.
    New search for: Nakhutsrishvili, I.
    New search for: Heusler, K. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    AES study of the GaAs-germanium oxynitride interface

    Contributors:

    Jishiashvili, D. (author) / Dzhanelidze, R. (author) / Shiolashvili, Z. (author) / Nakhutsrishvili, I. (author) / Heusler, K. E.

    Published in:

    Passivation of Metals and Semiconductors ; 165

    MATERIALS SCIENCE FORUM

    Publication date:

    1995-01-01

    Size:

    165 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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