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Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE
Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE
Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE
Gurskii, A. L. (author) / Gavrilenko, A. N. (author) / Lutsenko, E. V. (author) / Yablonskii, G. P. (author) / Heinrich, H. / Mullin, J. B.
1995-01-01
243 pages
Article (Journal)
Unknown
DDC:
620.11
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