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    Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

    New search for: Dumont, H.
    New search for: Auvray, L.
    New search for: Monteil, Y.
    New search for: Bouix, J.

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    Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

    New search for: Dumont, H.
    New search for: Auvray, L.
    New search for: Monteil, Y.
    New search for: Bouix, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

    New search for: Dumont, H.
    New search for: Auvray, L.
    New search for: Monteil, Y.
    New search for: Bouix, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

    Contributors:

    Dumont, H. (author) / Auvray, L. (author) / Monteil, Y. (author) / Bouix, J. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 84 ; 258 - 264

    Publication date:

    2001-01-01

    Size:

    7 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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