Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy: Fid-Bau Portal

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Fernandez, J. M. / Xie, M. H. / Matsumura, A. / Mokler, S. M.

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Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Fernandez, J. M. / Xie, M. H. / Matsumura, A. / Mokler, S. M.

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Fernandez, J. M. / Xie, M. H. / Matsumura, A. / Mokler, S. M.

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Check availability in my library

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Document information

Title:

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Contributors:

Fernandez, J. M. (author) / Xie, M. H. (author) / Matsumura, A. (author) / Mokler, S. M. (author)

Published in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 11 ; 396

Publication date:

1995-01-01

Size:

396 pages

ISSN:

0267-0836

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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