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Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy
Fernandez, J. M. (Autor:in) / Xie, M. H. (Autor:in) / Matsumura, A. (Autor:in) / Mokler, S. M. (Autor:in)
MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 11 ; 396
01.01.1995
396 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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