Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition: Fid-Bau Portal

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Hallstedt, J. / Parent, A. / Ostling, M. / Radamson, H. H.

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Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Hallstedt, J. / Parent, A. / Ostling, M. / Radamson, H. H.

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Hallstedt, J. / Parent, A. / Ostling, M. / Radamson, H. H.

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Document information

Title:

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Contributors:

Hallstedt, J. (author) / Parent, A. (author) / Ostling, M. (author) / Radamson, H. H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 97-101

Publication date:

2005-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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