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    Growth of Si -doped GaAs by low pressure metal organic vapour phase epitaxy

    New search for: Li, G.
    New search for: Jagadish, C.

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    Growth of Si -doped GaAs by low pressure metal organic vapour phase epitaxy

    New search for: Li, G.
    New search for: Jagadish, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth of Si -doped GaAs by low pressure metal organic vapour phase epitaxy

    New search for: Li, G.
    New search for: Jagadish, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Growth of Si -doped GaAs by low pressure metal organic vapour phase epitaxy

    Contributors:

    Li, G. (author) / Jagadish, C. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 33 ; 182

    Publication date:

    1995-01-01

    Size:

    182 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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