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    Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

    New search for: LaPierre, R. R.
    New search for: Robinson, B. J.
    New search for: Thompson, D. A.

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    Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

    New search for: LaPierre, R. R.
    New search for: Robinson, B. J.
    New search for: Thompson, D. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

    New search for: LaPierre, R. R.
    New search for: Robinson, B. J.
    New search for: Thompson, D. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates

    Contributors:

    LaPierre, R. R. (author) / Robinson, B. J. (author) / Thompson, D. A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 90 ; 437-445

    Publication date:

    1995-01-01

    Size:

    9 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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