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    Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

    New search for: Vaccaro, P. O.
    New search for: Ohnishi, H.
    New search for: Fujita, K.

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    Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

    New search for: Vaccaro, P. O.
    New search for: Ohnishi, H.
    New search for: Fujita, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

    New search for: Vaccaro, P. O.
    New search for: Ohnishi, H.
    New search for: Fujita, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

    Contributors:

    Vaccaro, P. O. (author) / Ohnishi, H. (author) / Fujita, K. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 51 ; 94-98

    Publication date:

    1998-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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