Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy: Fid-Bau Portal

Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

Carvalho, A. T. G. / De Oliveira, A. G. / Alves, E. S. / Baeta Moreira, M. V.

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Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

Carvalho, A. T. G. / De Oliveira, A. G. / Alves, E. S. / Baeta Moreira, M. V.

Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

Carvalho, A. T. G. / De Oliveira, A. G. / Alves, E. S. / Baeta Moreira, M. V.

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Title:

Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

Contributors:

Carvalho, A. T. G. (author) / De Oliveira, A. G. (author) / Alves, E. S. (author) / Baeta Moreira, M. V. (author) / Henini, M. / Szweda, R.

Published in:

Low Dimensional Structures and Devices ; 149-155

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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