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Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

Ogawa, K. / Ofuchi, H. / Maki, H. / Sonoyama, T. / Inoue, D. / Tabuchi, M. / Takeda, Y.

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Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

Ogawa, K. / Ofuchi, H. / Maki, H. / Sonoyama, T. / Inoue, D. / Tabuchi, M. / Takeda, Y.

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

Ogawa, K. / Ofuchi, H. / Maki, H. / Sonoyama, T. / Inoue, D. / Tabuchi, M. / Takeda, Y.

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Document information

Title:

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

Contributors:

Ogawa, K. (author) / Ofuchi, H. (author) / Maki, H. (author) / Sonoyama, T. (author) / Inoue, D. (author) / Tabuchi, M. (author) / Takeda, Y. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 425-427

Publication date:

2003-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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