Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells: Fid-Bau Portal

Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells

Tu, C. W. / Mei, X. B. / Yan, C. H. / Bi, W. G.

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Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells

Tu, C. W. / Mei, X. B. / Yan, C. H. / Bi, W. G.

Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells

Tu, C. W. / Mei, X. B. / Yan, C. H. / Bi, W. G.

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Check availability in my library

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Document information

Title:

Growth and characterization of strain-compensated InAsP/GaInP and InGaAs/GaInP multiple quantum wells

Contributors:

Tu, C. W. (author) / Mei, X. B. (author) / Yan, C. H. (author) / Bi, W. G. (author) / Henini, M. / Szweda, R.

Published in:

Low Dimensional Structures and Devices ; 166-170

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

Publication date:

1995-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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