A platform for research: civil engineering, architecture and urbanism
Real-time monitoring of heteroepitaxial growth processes on the silicon(001) surface by p-polarized reflectance spectroscopy
Real-time monitoring of heteroepitaxial growth processes on the silicon(001) surface by p-polarized reflectance spectroscopy
Real-time monitoring of heteroepitaxial growth processes on the silicon(001) surface by p-polarized reflectance spectroscopy
Bachmann, K. J. (author) / Rossow, U. (author) / Dietz, N. (author) / Henini, M. / Szweda, R.
1995-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy
British Library Online Contents | 1995
|British Library Online Contents | 1996
|3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
British Library Online Contents | 2010
|Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC
British Library Online Contents | 2000
|Kinetic effects in heteroepitaxial growth
British Library Online Contents | 2002
|