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Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Dietz, N. (author) / Rossow, U. (author) / Aspnes, D. E. (author) / Bachmann, K. J. (author)
APPLIED SURFACE SCIENCE ; 102 ; 47-51
1996-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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