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    Erbium Doping to P-Based III-V Semiconductors by OMVPE with TSP as a Non-Toxic P Source

    New search for: Fujiwara, Y.
    New search for: Ito, Y.
    New search for: Nonogaki, Y.
    New search for: Matsubara, N.
    New search for: Fujita, K.
    New search for: Takeda, Y.

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    Erbium Doping to P-Based III-V Semiconductors by OMVPE with TSP as a Non-Toxic P Source

    New search for: Fujiwara, Y.
    New search for: Ito, Y.
    New search for: Nonogaki, Y.
    New search for: Matsubara, N.
    New search for: Fujita, K.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Erbium Doping to P-Based III-V Semiconductors by OMVPE with TSP as a Non-Toxic P Source

    New search for: Fujiwara, Y.
    New search for: Ito, Y.
    New search for: Nonogaki, Y.
    New search for: Matsubara, N.
    New search for: Fujita, K.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Erbium Doping to P-Based III-V Semiconductors by OMVPE with TSP as a Non-Toxic P Source

    Contributors:

    Fujiwara, Y. (author) / Ito, Y. (author) / Nonogaki, Y. (author) / Matsubara, N. (author) / Fujita, K. (author) / Takeda, Y. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 621-626

    Publication date:

    1995-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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