Heavily Carbon-Doped GaAs Grown by MOVPE Using Carbon Tetrabromide for HBTs

Wu, H. | British Library Online Contents | 1996

GaAs planar doped barrier diodes

Szentpali, B. / Van Tuyen, V. / Constantinidis, G. et al. | British Library Online Contents | 2001

The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si

Tokuda, Y. / Namizaki, T. / Okumura, T. | British Library Online Contents | 2001

Potential sources of degradation in InGaAs/GaAs laser diodes

Rechenberg, I. / Beister, G. / Bugge, F. et al. | British Library Online Contents | 1994

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. et al. | British Library Online Contents | 1993