Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes

Fushimi, H. / Wada, K. | British Library Online Contents | 1995

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide

Attolini, G. / Bosi, M. / Rossi, F. et al. | British Library Online Contents | 2010

Growth mechanism in heavily carbon-doped GaAsxSb1-x grown by MOCVD

Oda, Y. / Watanabe, N. / Yokoyama, H. et al. | British Library Online Contents | 2003

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. et al. | British Library Online Contents | 1993

Carbon Tetrabromide-A New Brominating Agent for Alkanes and Arylalkanes

Smirnov, V. V. / Zelikman, V. M. / Beletskaya, I. P. et al. | British Library Online Contents | 2002