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    Study of Defect Behavior In Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

    New search for: Fujinami, M.
    New search for: Hayashi, S.

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    Study of Defect Behavior In Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

    New search for: Fujinami, M.
    New search for: Hayashi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of Defect Behavior In Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

    New search for: Fujinami, M.
    New search for: Hayashi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Study of Defect Behavior In Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

    Contributors:

    Fujinami, M. (author) / Hayashi, S. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 1165-1170

    Publication date:

    1995-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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