Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam: Fid-Bau Portal

Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam

Zhou, X. Y. / Zhang, T. H. / Zhang, X. F. / Weng, H. M. / Fan, Y. M. / Du, J. F. / Han, R. D.

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Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam

Zhou, X. Y. / Zhang, T. H. / Zhang, X. F. / Weng, H. M. / Fan, Y. M. / Du, J. F. / Han, R. D.

Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam

Zhou, X. Y. / Zhang, T. H. / Zhang, X. F. / Weng, H. M. / Fan, Y. M. / Du, J. F. / Han, R. D.

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Document information

Title:

Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam

Contributors:

Zhou, X. Y. (author) / Zhang, T. H. (author) / Zhang, X. F. (author) / Weng, H. M. (author) / Fan, Y. M. (author) / Du, J. F. (author) / Han, R. D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 363/365 ; 475-477

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Djourelov, N. / Suzuki, T. / He, C. et al. | British Library Online Contents | 2004

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Maekawa, M. / Kawasuso, A. / Chen, Z. Q. et al. | British Library Online Contents | 2005

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Fujinami, M. / Hayashi, S. | British Library Online Contents | 1995