Oxygen Related Defect Centers: The Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon: Fid-Bau Portal

Oxygen Related Defect Centers: The Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

Prokes, S. M. / Carlos, W. E.

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Oxygen Related Defect Centers: The Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

Prokes, S. M. / Carlos, W. E.

Oxygen Related Defect Centers: The Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

Prokes, S. M. / Carlos, W. E.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Oxygen Related Defect Centers: The Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

Contributors:

Prokes, S. M. (author) / Carlos, W. E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1679-1682

Publication date:

1995-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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