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    Oxygen-Related Defect Centers in 4H Silicon Carbide

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    New search for: Pensl, G.
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    Oxygen-Related Defect Centers in 4H Silicon Carbide

    New search for: Dalibor, T.
    New search for: Pensl, G.
    New search for: Yamamoto, T.
    New search for: Kimoto, T.
    New search for: Matsunami, H.
    New search for: Sridhara, S. G.
    New search for: Nizhner, D. G.
    New search for: Devaty, R. P.
    New search for: Choyke, W. J.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

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    Check availability in my library
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    Oxygen-Related Defect Centers in 4H Silicon Carbide

    New search for: Dalibor, T.
    New search for: Pensl, G.
    New search for: Yamamoto, T.
    New search for: Kimoto, T.
    New search for: Matsunami, H.
    New search for: Sridhara, S. G.
    New search for: Nizhner, D. G.
    New search for: Devaty, R. P.
    New search for: Choyke, W. J.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
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    Access

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    Document information
    Title:

    Oxygen-Related Defect Centers in 4H Silicon Carbide

    Contributors:

    Dalibor, T. (author) / Pensl, G. (author) / Yamamoto, T. (author) / Kimoto, T. (author) / Matsunami, H. (author) / Sridhara, S. G. (author) / Nizhner, D. G. (author) / Devaty, R. P. (author) / Choyke, W. J. (author) / Pensl, G.

    Published in:

    Silicon Carbide, III-Nitrides and Related Materials ; 553-556

    MATERIALS SCIENCE FORUM ; 264/268

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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