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Defect observation in SiC wafers by room-temperature photoluminescence mapping
Defect observation in SiC wafers by room-temperature photoluminescence mapping
Defect observation in SiC wafers by room-temperature photoluminescence mapping
Higashi, E. (author) / Tajima, M. (author) / Hoshino, N. (author) / Hayashi, T. (author) / Kinoshita, H. (author) / Shiomi, H. (author) / Matsumoto, S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 53-57
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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