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    Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

    New search for: Kojima, K.
    New search for: Kato, T.
    New search for: Kuroda, S.
    New search for: Okumura, H.
    New search for: Arai, K.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

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    Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

    New search for: Kojima, K.
    New search for: Kato, T.
    New search for: Kuroda, S.
    New search for: Okumura, H.
    New search for: Arai, K.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

    New search for: Kojima, K.
    New search for: Kato, T.
    New search for: Kuroda, S.
    New search for: Okumura, H.
    New search for: Arai, K.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

    Contributors:

    Kojima, K. (author) / Kato, T. (author) / Kuroda, S. (author) / Okumura, H. (author) / Arai, K. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

    Published in:

    Silicon Carbide and Related Materials - 2005 ; 147-152

    MATERIALS SCIENCE FORUM ; 527/529

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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