A platform for research: civil engineering, architecture and urbanism
Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers
Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers
Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers
Graef, D. (author) / Lambert, U. (author) / Brohl, M. (author) / Ehlert, A. (author) / Wahlich, R. (author) / Wagner, P. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 50-54
1996-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Precipitate recognition and recombination strength in annealed Czochralski silicon wafers
British Library Online Contents | 1995
|Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
British Library Online Contents | 1996
|Effect of light germanium doping on thermal donors in Czochralski silicon wafers
British Library Online Contents | 2006
|Homogeneity of thermally annealed Fe-doped InP wafers
British Library Online Contents | 1997
|Study of PbTe Epitaxial Layers Grown Directly Over Silicon Wafers
British Library Online Contents | 2002
|