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Electroreflectance spectroscopy of strained Si~1~-~xGe~x layers on silicon

Ebner, T. / Thonke, K. / Sauer, R. / Schaeffler, F. / Herzog, H. J.

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Electroreflectance spectroscopy of strained Si~1~-~xGe~x layers on silicon

Ebner, T. / Thonke, K. / Sauer, R. / Schaeffler, F. / Herzog, H. J.

Electroreflectance spectroscopy of strained Si~1~-~xGe~x layers on silicon

Ebner, T. / Thonke, K. / Sauer, R. / Schaeffler, F. / Herzog, H. J.

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Check availability in my library

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Document information

Title:

Electroreflectance spectroscopy of strained Si~1~-~xGe~x layers on silicon

Contributors:

Ebner, T. (author) / Thonke, K. (author) / Sauer, R. (author) / Schaeffler, F. (author) / Herzog, H. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 102 ; 90-93

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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