Intense photoluminescence from strained SiGe sub-100 nm wires selectively grown on Si by LPCVD: Fid-Bau Portal

Intense photoluminescence from strained SiGe sub-100 nm wires selectively grown on Si by LPCVD

Souifi, A. / Vescan, L. / Loo, R. / Gartner, P. / Dieker, C. / Hartmann, A. / Lueth, H.

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Intense photoluminescence from strained SiGe sub-100 nm wires selectively grown on Si by LPCVD

Souifi, A. / Vescan, L. / Loo, R. / Gartner, P. / Dieker, C. / Hartmann, A. / Lueth, H.

Intense photoluminescence from strained SiGe sub-100 nm wires selectively grown on Si by LPCVD

Souifi, A. / Vescan, L. / Loo, R. / Gartner, P. / Dieker, C. / Hartmann, A. / Lueth, H.

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Document information

Title:

Intense photoluminescence from strained SiGe sub-100 nm wires selectively grown on Si by LPCVD

Contributors:

Souifi, A. (author) / Vescan, L. (author) / Loo, R. (author) / Gartner, P. (author) / Dieker, C. (author) / Hartmann, A. (author) / Lueth, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 102 ; 381-384

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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