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Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry
Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry
Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry
Yu, G. (Autor:in) / Soga, T. (Autor:in) / Jimbo, T. (Autor:in) / Umeno, M. (Autor:in) / Feldman, L. C. / Nishizawa, J. / Van der Weg, W. F.
01.01.1996
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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