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    Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

    New search for: Asaoka, N.
    New search for: Funato, H.
    New search for: Suhara, M.
    New search for: Okumura, T.

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    Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

    New search for: Asaoka, N.
    New search for: Funato, H.
    New search for: Suhara, M.
    New search for: Okumura, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

    New search for: Asaoka, N.
    New search for: Funato, H.
    New search for: Suhara, M.
    New search for: Okumura, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

    Contributors:

    Asaoka, N. (author) / Funato, H. (author) / Suhara, M. (author) / Okumura, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 413-418

    Publication date:

    2003-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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