A platform for research: civil engineering, architecture and urbanism
Weak fluence dependence of charge generation in ultra-thin oxides on silicon
Weak fluence dependence of charge generation in ultra-thin oxides on silicon
Weak fluence dependence of charge generation in ultra-thin oxides on silicon
Farmer, K. R. (author) / Debauche, C. P. (author) / Giordano, A. R. (author) / Lundgren, P. (author) / Andersson, M. O. (author) / Buchanan, D. A. (author)
APPLIED SURFACE SCIENCE ; 104/105 ; 369-372
1996-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence
British Library Online Contents | 2013
|Surface, interface and valence band structures of ultra-thin silicon oxides
British Library Online Contents | 1998
|Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
British Library Online Contents | 1997
|A simple model for high fluence ultra-short pulsed laser metal ablation
British Library Online Contents | 2007
|UV Fluence Monitoring & Modeling
British Library Conference Proceedings | 2004
|