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Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
Eichler, S. (author) / Boerner, F. (author) / Gebauer, J. (author) / Krause-Rehberg, R. (author) / Jean, Y. C. / Eldrup, M. / Schrader, D. M. / West, R. N.
1997-01-01
3 pages
Article (Journal)
English
DDC:
620.11
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