A platform for research: civil engineering, architecture and urbanism
Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy
Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy
Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy
Lee, J. W. (author) / Schuh, D. (author) / Bichler, M. (author) / Abstreiter, G. (author)
APPLIED SURFACE SCIENCE ; 228 ; 306-312
2004-01-01
7 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1996
|Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
British Library Online Contents | 2011
|Molecular Beam Epitaxial Growth of 1.5 μm Wavelength GaAs Based Metamorphic InAs Quantum Dots
British Library Online Contents | 2014
|