A platform for research: civil engineering, architecture and urbanism
Plasma etching of InGaP, AlInP and AlGaP in BCl~3 environments
Plasma etching of InGaP, AlInP and AlGaP in BCl~3 environments
Plasma etching of InGaP, AlInP and AlGaP in BCl~3 environments
Hong, J. (author) / Lee, J. W. (author) / Santana, C. J. (author) / Abernathy, C. R. (author) / Pearton, S. J. (author) / Hobson, W. S. (author) / Ren, F. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 41 ; 247-252
1996-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence properties of AlGaP superlattices
British Library Online Contents | 1995
|High selectivity Inductively Coupled Plasma etching of GaAs over InGaP
British Library Online Contents | 2000
|Optical properties of gas source MBE grown AlInP on GaAs
British Library Online Contents | 2007
|Gas source MBE growth and doping characteristics of AlInP on GaAs
British Library Online Contents | 2006
|Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires
British Library Online Contents | 2001
|